Increasing adoption of energy & power applications and Increased demand for IT & Telecommunication industry Drive The Global RF GaN Market

Market Research Future (MRFR) will be publishing a cooked research report on the “Global RF GaN  Market” that contains the information from 2018 to 2030. 

MRFR recognizes the following companies as the key players in the global RF GaN market: NXP Semiconductors (Netherlands), Analog Devices, Inc.(US), ST Microelectronics N.V. (Switzerland), Toshiba Corporation (Japan), ROHM Company Ltd (Japan), Wolfspeed, Inc.(US), Aethercomm Inc. (US), Microchip Technology (US), Raytheon Company (US), Qorvo, Inc. (US), Mitsubishi Electric Corporation (Japan), RFHIC Corporation (South Korea), Mercury System Inc (US), Sumitomo Electric Industries, Ltd. (Japan), MACOM (US), and Integra Technologies, Inc. (US),

Market Highlights

The global RF GaN market is projected to be valued at USD 4,659.0  Million by the end of 2030, registering a CAGR of 20.7% during the forecast period.

RF GaN is an emerging technology for power electronics applications that require high power density RF performance. A wide range of products and services utilize RF power amplifiers in their transmitter circuitry such as wireless infrastructure for cell phones, radio and television broadcasting, MRI machines, radar, space and satellite communications, as well as military communications. Increasing adoption of energy & power applications and increased demand for RF GaN devices for IT & Telecommunication equipment are the key drivers for the market during the assessment period. However, competition from Silicon Carbide (SiC) devices restrains the market growth.

GaN transistors are increasingly finding application in radio frequency applications as they offer optimum solutions for simultaneous high power, high frequency, and high-temperature operation. GaN RF devices are primarily used for enabling wireless infrastructure for cell phones, radio and television broadcasting, MRI machines, radar, space and satellite communications, as well as military communications. RF GaN technology is also suitable for 5G or advanced 4G systems, as it works at higher frequency ranges.

The past decade has witnessed significant growth in the RF GaN market which has reshaped the RF power devices landscape. Demand for RF amplifiers with a high rate of data transmission, higher frequency, and power has led to the development of GaN RF device technology. The various factors attributing to the growth of the global RF GaN market are the increasing adoption of RF GaN power devices for energy & power applications and a rise in demand for IT & telecommunication equipment that uses RF GaN power devices.

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Segment Analysis

The global RF GaN market has been segmented on the basis of type, application, and region.

The global RF GaN market, based on type, has been segmented into GaN on Sic, GaN on Silicon, and GaN on Demand.

The global RF GaN market, based on Application, has been segmented into 5G Wireless Infrastructure, Aerospace, Military and Defence, and Others.

Key Findings of the Study:

• The global RF GaN market is projected to reach a value of USD 4,659.0million by 2030, with a CAGR of around 20.7% during the forecast period from 2022 to 2030.


• North America accounted for the largest market share in 2021. North America has been further segmented into the US, Canada, and Mexico. North America accounts for one of the largest market shares in the RF GAN market. The market value is further increased by the significant demand from the defence and military industries as well as modern RF GaN trends brought on by the widespread deployment of electric cars and 5G cellular networks in the region. It is anticipated that the North American RF GaN market will continue to dominate during the evaluation period. Additionally, the growing need for additional bandwidth from the industry of electronic devices drives the growth of the RF GaN market.


• Europe is expected to be the second-largest market in 2021. As the energy needs of their individual populations rise, European countries are increasing their mandates for renewable energy efficiency. This applies to both the generation and storage of eco-power (battery farms). Significant government investment in local, independent research budgets is being driven by national prestige, defence, technology, and security concerns in order to advance the ultra-tech dimension of RF GaN (and other) technologies. Over the past few years, RF GaN devices have become much more widely used.


• US is among the top contributors in the RF GaN s market. In the US, the satellite sector is expanding. The use of RF GaN in defence and commercial satellite communications is expanding, which improves market income. Opportunities abound due to the extensive use of RF GaN in 5G networks and other aerospace and defence applications. Additionally, the enormous demand for energy-efficient equipment and wireless communication has a beneficial effect on market dynamics in the United States.


• Innovation In linear ization and power efficiency of RF power amplifiers is the key opportunity in this market.