• Cat-intel
  • MedIntelliX
  • Resources
  • About Us
  • Request Free Sample ×

    Kindly complete the form below to receive a free sample of this Report

    Leading companies partner with us for data-driven Insights

    clients tt-cursor
    Hero Background

    GaN on Si EPI wafers Market

    ID: MRFR/SEM/19773-CR
    128 Pages
    Aarti Dhapte
    March 2024

    GaN on Si EPI wafers Market Research Report Information By Structure (Lateral GaN on Si, Vertical GaN on Si, and Hybrid GaN on Si), By Application (Low power applications, medium power applications, High power applications, and Very high power applications), By Procurement model (Tender based and direct purchase), By Industry Vertical (IT & Telecom, Consumer electronics, Automotive, Aerospace & Defense, Others) And By Region (North America, Europe, Asia-Pacific, Middle East & Africa, And South America) –Industry Forecast Till 2035

    Share:
    Download PDF ×

    We do not share your information with anyone. However, we may send you emails based on your report interest from time to time. You may contact us at any time to opt-out.

    GaN on Si EPI wafers Market Infographic
    Purchase Options

    GaN on Si EPI wafers Market Summary

    As per Market Research Future Analysis, the global GaN on Si EPI wafers market was valued at USD 1817.79 million in 2024 and is projected to reach USD 9864.10 million by 2035, growing at a CAGR of 16.62% from 2025 to 2035. Key drivers include the increasing demand for higher power density power electronics, wireless charging, and significant demand from the consumer electronics and automotive sectors. The market is segmented by structure, application, procurement model, and industry verticals, with Lateral GaN on Si holding the largest market share at 40.2%. Very high-power applications dominate the application segment with a 32.5% market share, while direct purchase leads the procurement model with 64.6%. Asia-Pacific holds the largest regional market share at 44.1%.

    Key Market Trends & Highlights

    The GaN on Si EPI wafers market is witnessing significant growth driven by technological advancements and increasing applications.

    • Market Size in 2024: USD 1817.79 million
    • Projected Market Size by 2035: USD 9864.10 million
    • CAGR from 2025 to 2035: 16.62%
    • Very High-Power Applications Market Share: 32.5%

    Market Size & Forecast

    2024 Market Size USD 1817.79 million
    2035 Market Size USD 9864.10 million

    Major Players

    Infineon Technologies, Texas Instruments Incorporated, Toshiba Corporation, Panasonic Corporation, NexGen Power Systems, Efficient Power Conversion Corporation, STMICROELECTRONICS, Navitas Semiconductor Corporation

    GaN on Si EPI wafers Market Trends

    INCREASING DEMAND FOR HIGHER POWER DENSITY POWER ELECTRONICS

    The increasing demand for higher power density power electronics is considered a key driver for the GaN on Si EPI wafer market. One of the main drivers of the GaN on Si EPI wafer market is the trend towards miniaturization of electronic devices and increasing demand for high-performance electronic products. As electronic devices become smaller and more complex, there is a growing need for more compact and efficient power electronics.

    GaN on Si EPI wafers offer higher power density and efficiency compared to traditional silicon-based power electronics, making them ideal for high-power applications that require smaller and more efficient power electronics. Another driver of the GaN on Si EPI wafer market is the growing demand for 5G technology. 5G technology requires higher frequency and faster data rates than previous generations of wireless technology, which in turn requires the use of new materials and technologies such as GaN. GaN is already being used in RF applications, and its use in 5G technology is expected to increase significantly in the coming years.

    The ongoing advancements in GaN on Si EPI wafers technology are poised to revolutionize the semiconductor landscape, enhancing efficiency and performance across various applications.

    U.S. Department of Energy

    GaN on Si EPI wafers Market Drivers

    Expansion of 5G Infrastructure

    The rollout of 5G infrastructure significantly impacts the Global GaN on Si EPI wafers Market Industry. The demand for high-frequency, high-efficiency components in 5G base stations and devices necessitates the use of GaN technology, which offers superior performance compared to traditional materials. As telecommunications companies invest heavily in 5G networks, the need for GaN-based solutions is expected to rise. This trend not only enhances communication capabilities but also drives market growth, with projections indicating a robust expansion in the coming years. The Global GaN on Si EPI wafers Market Industry is likely to play a critical role in supporting the infrastructure required for next-generation connectivity.

    Growing Adoption of Electric Vehicles

    The increasing adoption of electric vehicles (EVs) serves as a pivotal driver for the Global GaN on Si EPI wafers Market Industry. As governments worldwide implement stringent emissions regulations and provide incentives for EV adoption, the demand for high-performance power electronics in EVs escalates. GaN technology, known for its efficiency and thermal performance, plays a crucial role in enhancing the performance of EV powertrains. This trend is expected to propel the market forward, with a projected CAGR of 16.62% from 2025 to 2035. The Global GaN on Si EPI wafers Market Industry is thus well-positioned to support the burgeoning EV market, contributing to a greener transportation future.

    Advancements in Semiconductor Technology

    Technological advancements in semiconductor manufacturing processes significantly influence the Global GaN on Si EPI wafers Market Industry. Innovations such as improved epitaxial growth techniques and enhanced material quality contribute to the performance and reliability of GaN devices. These advancements enable the production of smaller, lighter, and more efficient components, which are essential for modern electronic applications. As a result, the market is likely to witness substantial growth, with projections indicating a rise to 9.86 USD Billion by 2035. The Global GaN on Si EPI wafers Market Industry stands to benefit from these technological improvements, fostering a competitive edge in the semiconductor landscape.

    Increased Investment in Renewable Energy

    The Global GaN on Si EPI wafers Market Industry benefits from the increased investment in renewable energy sources, such as solar and wind power. As the world shifts towards sustainable energy solutions, the demand for efficient power conversion systems rises. GaN technology, with its ability to handle high voltages and frequencies, is well-suited for applications in renewable energy inverters and converters. This growing focus on renewable energy is expected to drive market growth, as stakeholders seek to optimize energy efficiency and reduce costs. The Global GaN on Si EPI wafers Market Industry is thus positioned to capitalize on this trend, contributing to the global transition towards sustainable energy.

    Rising Demand for Efficient Power Electronics

    The Global GaN on Si EPI wafers Market Industry experiences a surge in demand for efficient power electronics, driven by the increasing need for energy-efficient solutions across various sectors. As industries strive to reduce energy consumption and carbon footprints, GaN technology emerges as a viable alternative to traditional silicon-based devices. This transition is particularly evident in applications such as electric vehicles and renewable energy systems. The market is projected to reach 1.82 USD Billion in 2024, reflecting the growing adoption of GaN technology in power electronics. The Global GaN on Si EPI wafers Market Industry is thus positioned to capitalize on this trend, potentially leading to a more sustainable energy landscape.

    Market Segment Insights

    GaN on Si EPI Wafers Structure Insights

    The GaN on Si EPI wafers market in this report has been segmented on the basis of Structure into 3 types, namely Lateral GaN on Si, Vertical GaN on Si and Hybrid GaN on Si.

    Lateral GaN on Si holds the largest market share which is 40.2% while the second largest share is held by vertical GaN on Si. Lateral GaN on Si EPI wafers are a type of semiconductor wafer used in the production of lateral GaN devices. These wafers feature a Gallium Nitride (GaN) layer grown on a Silicon (Si) substrate using an epitaxial process. The lateral design refers to the layout of the GaN transistors or devices, where the current flows horizontally along the surface of the wafer.

    While vertical GaN on Si EPI wafers are a type of semiconductor wafer used in the production of vertical GaN devices. These wafers feature a Gallium Nitride (GaN) layer grown on a Silicon (Si) substrate using an epitaxial process. The vertical design refers to the structure of the GaN devices, where the current flows vertically through the layers of the wafer.

    GaN on Si EPI Wafers Applications Insights

    The GaN on Si EPI wafers Market, in this report, has been segmented on the basis of Application into low-power applications, medium-power applications, high-power applications, very high-power applications.

    Low-power applications is further segmented into AC-DC adapters for laptops and other electronic devices, USB-PD chargers, Wireless charging pads, and others. Medium-Power Applications is segmented into LED lighting power supplies, AC-DC converters, Power supplies for electronic appliances, and others. High-Power Applications is segmented into Electric vehicle (EV) power converters, Motor drives, Power converters, and others. Very-High Power Applications is segmented into Grid-tied inverters for utility-scale solar and wind power plants, Traction inverters, Power converters, and others.

    Very high-power application segment holds the largest market share, and it is 32.5% as of 2022 while high power applications segment holds the second largest market share. GaN on Si EPI wafers excel in very high-power applications, where extreme power handling capabilities, high efficiency, and reliability are critical. These wafers enable the development of devices that can handle the most demanding power requirements and outperform traditional silicon-based solutions. While, GaN on Si EPI wafers are particularly well-suited for high-power applications, where superior power handling capabilities, high efficiency, and robustness are crucial.

    These wafers enable the development of high-power devices that outperform traditional silicon-based solutions.

    GaN on Si EPI Wafers Procurement model Insights

    The GaN on Si EPI wafers Market, in this report, has been segmented on the basis of Procurement model into Tender Based and Direct Purchase. The direct purchase segment holds the largest market share which is 64.6% while the tender based segment holds 35.4% share as of 2022.

    Source: Secondary Research, Primary Research, MRFR Database, and Analyst Review

    Direct purchase is a procurement model commonly used for acquiring GaN on Si EPI wafers in various industries. In this procurement method, organizations directly approach suppliers and negotiate the terms and conditions of the purchase without soliciting competitive bids or proposals.

    Tender-based procurement is a commonly employed model for acquiring GaN on Si EPI wafers in various industries. In this procurement method, organizations issue a formal request for suppliers to submit competitive bids or proposals to fulfill their GaN on Si EPI wafer requirements. The tender process begins with the organization issuing a detailed tender document that outlines the specifications, quantity, quality requirements, delivery schedule, and other terms and conditions.

    GaN on Si EPI Wafers Industry Verticals Insights

    The GaN on Si EPI wafers market in this report has been segmented on the basis of It & Telecom, consumer electronics, safety and security, automotive, aerospace and defense, and others. Consumer electronics holds the second largest share, which is 19.9% while others segment holds the largest market share.

    Consumer electronics is a prominent industry vertical that heavily relies on GaN on Si EPI wafers for the development of innovative and high-performance devices. GaN on Si EPI wafers offer numerous advantages that cater to the evolving needs of the consumer electronics market. In the consumer electronics sector, GaN on Si EPI wafers are utilized in various applications such as power adapters, chargers, inverters, LED lighting, and audio systems. The high-power density, improved efficiency, and compact form factor of GaN-based devices enable the design of sleeker and more energy-efficient consumer electronic products.

    The applications of GaN on Si EPI wafers extend beyond the previously mentioned industry verticals. There are several other industry sectors where GaN on Si EPI wafers find significant utility and foster technological advancements. One such industry vertical is the renewable energy sector. GaN on Si EPI wafers are employed in renewable energy systems such as solar inverters and wind power converters. The high efficiency and power handling capabilities of GaN-based devices contribute to improved energy conversion and grid integration, enabling the widespread adoption of renewable energy sources.

    Another industry vertical is the medical sector, where GaN on Si EPI wafers are utilized in medical imaging equipment, ultrasound systems, and various medical devices. GaN-based solutions offer enhanced imaging quality, higher signal resolution, and improved device performance, contributing to more accurate diagnoses and advanced medical procedures.

    Get more detailed insights about GaN on Si EPI wafers Market

    Regional Insights

    Based on Region, the global GaN on Si EPI wafers is segmented into North America, Europe, Asia-Pacific, Middle East & Africa, and South America. Asia-Pacific holds the largest market share, which is 44.1% of the total share while North America holds the second largest market share which is 29.3% of the total share.

    North America has been further segmented into the US, Canada, and Mexico. North America accounts for one of the largest market shares in the GaN on Silicon for power market due to the presence of notable GaN on Silicon companies such as Texas Instruments Incorporated, NXP USA Inc and many others. The major players in the GaN market have been working on the technology for over 15 years and have amassed a sizable body of knowledge, skill, and competence. But most importantly, they have developed an almost fervent feeling of faith in technology's long-term potential.

    Asia-Pacific has been further segmented into China, Japan, India, and the Rest of Asia-Pacific. Asia-Pacific is another promising market for GaN on Si for power. Asia-Pacific is a center for automotive, aerospace, and semiconductor technology. Due to rapidly expanding markets for energy-efficient electronics, China, India, and Japan account for large shares in the area. The rapidly developing semiconductor market is one of the major factors which drives the growth of GaN on Si for power in the Asia-Pacific region.

    FIGURE 2: GAN ON SI EPI WAFERS MARKET SIZE BY REGION 2022 VS 2032

    GAN ON SI EPI WAFERS MARKET SIZE BY REGION 2022 VS 2032

    Source: Secondary Research, Primary Research, MRFR Database, and Analyst Review

    Key Players and Competitive Insights

    With a strong presence across different verticals and geographies, the GaN on Si EPI Wafers market is highly competitive and dominated by established, pure-play vendors. Over 12 vendors cater to this market, and they continually innovate their solutions to meet the evolving needs of businesses by adopting new technologies. These vendors have a robust geographic footprint and partner ecosystem to cater to diverse customer segments. The GaN on Si EPI Wafers market is highly competitive, with many vendors offering similar products and services.

    The major players in the market include Infineon Technologies, Texas Instruments Incorporated, Toshiba Corporation, Panasonic Corporation, NexGen Power Systems, Efficient Power Conversion Corporation, STMICROELECTRONICS, Navitas Semiconductor Corporation, NEXPERIA, Semiconductor Components Industries, Llc, Rohm Company Ltd, Broadcom Inc, MACOM Technology Solutions Inc, WOLFSPEED, INC, X-FAB Silicon Foundries SE, NXP Semiconductors, Renesas Electronics Corp, VisIC Technologies Ltd, Qorvo Inc.

    Key Companies in the GaN on Si EPI wafers Market market include

    Industry Developments

    March 2023: EPC has collaborated with SHARGE Technology (SHARGE) to create a 67 W USB PD charger with a power display panel. The Retro 67 fast charger employs EPC's 100 V GaN FET, EPC2218, which can generate 231 A pulsed current in a 3.5 mm x 1.95 mm footprint, providing designers with a substantially smaller, more efficient device than silicon MOSFET for USB PD fast chargers.

    April 2023: Navitas Semiconductor has made a agreement with distribution deal with Mouser Electronics. Mouser will stock Navitas GanFast and GeneSiC wide bandgap (WBG) semiconductor technology under the new global partnership. GaNFast power integrated circuits (ICs) combine gallium nitride (GaN) power and drive with control, sensing, and protection to provide quicker charging, higher power density, and greater energy savings.

    April 2023: ZF and Wolfspeed announced their collaboration on upcoming silicon carbide semiconductor devices. The cooperation also involves a sizeable investment from ZF to help finance the development of the largest and most sophisticated 200mm silicon carbide device fab in Ensdorf, Germany.

    Future Outlook

    GaN on Si EPI wafers Market Future Outlook

    The GaN on Si EPI wafers market is projected to grow at a 16.60% CAGR from 2025 to 2035, driven by advancements in power electronics and increasing demand for efficient energy solutions.

    New opportunities lie in:

    • Develop innovative GaN on Si EPI wafer designs for high-frequency applications.
    • Expand production capabilities to meet rising demand in automotive and telecommunications sectors.
    • Invest in R&D for next-generation materials to enhance performance and reduce costs.

    By 2035, the GaN on Si EPI wafers market is expected to achieve substantial growth, solidifying its role in advanced electronic applications.

    Market Segmentation

    GaN on Si EPI Wafers Regional Outlook

    North America
    • US
    • Canada
    • Mexico
    Europe
    • Germany
    • France
    • UK
    • Italy
    • Spain
    • Rest of Europe
    Asia-Pacific
    • China
    • Japan
    • India
    • Australia
    • South Korea
    • Australia
    • Rest of Asia-Pacific
    Middle East & Africa
    South America

    GaN on Si EPI Wafers Structure Outlook

    • Lateral GaN on Si
    • Vertical GaN on Si
    • Hybrid GaN on Si

    GaN on Si EPI Wafers Applications Outlook

    • Low power applications
    • Medium power applications
    • High power applications
    • Very high-power applications

    GaN on Si EPI Wafers Industry Vertical Outlook

    • IT & telecom
    • Consumer electronics
    • Automotive
    • Aerospace and defense
    • others

    GaN on Si EPI Wafers Procurement Model Outlook

    • Tender based
    • Direct purchase

    Report Scope

    Report Attribute/Metric Details
    Market Size 2024 USD 1817.79 Million
    Market Size 2025 USD 2119.91 Million
    Market Size 2035 9864.10 (Value (USD Million))
    Compound Annual Growth Rate (CAGR) 16.62% (2025 - 2035)
    Base Year 2024
    Market Forecast Period 2025 - 2035
    Historical Data 2020- 2023
    Market Forecast Units Value (USD Million)
    Report Coverage Revenue Forecast, Market Competitive Landscape, Growth Factors, and Trends
    Segments Covered Procurement model, applications, structure, Industry vertical
    Geographies Covered Europe, North America, Asia-Pacific, and the South America, Middle East & Africa
    Countries Covered The U.S, Germany, Canada, U.K., Italy, France, Spain, Japan, China, Australia, India, South Korea, and Brazil
    Key Companies Profiled Infineon Technologies, Texas Instruments Incorporated, Toshiba Corporation, Panasonic Corporation, NexGen Power Systems, Efficient Power Conversion Corporation, STMICROELECTRONICS, Navitas Semiconductor Corporation, NEXPERIA, Semiconductor Components Industries, Llc, Rohm Company Ltd, Broadcom Inc, MACOM Technology Solutions Inc, WOLFSPEED, INC, X-FAB Silicon Foundries SE,
    Key Market Opportunities ·       Growing adoption electronic vehicles and hybrid EVs ·       Increasing use in 5G infrastructure
    Key Market Dynamics ·       Increasing demand for higher power density power electronics

    Market Highlights

    Author
    Aarti Dhapte
    Team Lead - Research

    She holds an experience of about 6+ years in Market Research and Business Consulting, working under the spectrum of Information Communication Technology, Telecommunications and Semiconductor domains. Aarti conceptualizes and implements a scalable business strategy and provides strategic leadership to the clients. Her expertise lies in market estimation, competitive intelligence, pipeline analysis, customer assessment, etc.

    Leave a Comment

    FAQs

    How much is the GaN on Si EPI Wafers market?s

    The GaN on Si EPI wafers Market size is expected to be valued at USD 1817.79 billion in 2024.

    What is the growth rate of the GaN on Si EPI Wafers market?

    The global market is projected to grow at a CAGR of 16.62% during the forecast period, 2025 to 2035.

    Which region held the largest market share in the GaN on Si EPI Wafers market?

    Asia-Pacific had the largest share of the global market.

    Who are the key players in the GaN on Si EPI Wafers market?

    The key players in the market are Infineon Technologies, Texas Instruments Incorporated, Toshiba Corporation, Panasonic Corporation, NexGen Power Systems, Efficient Power Conversion Corporation, STMICROELECTRONICS, Navitas Semiconductor Corporation, NEXPERIA.

    Download Free Sample

    Kindly complete the form below to receive a free sample of this Report

    Case Study
    Chemicals and Materials